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| Author |
Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. |
| Title |
Optical mixing in a patterned YBa2Cu3O7-δ thin film |
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Journal Article |
| Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal  |
Appl. Phys. Lett. |
| Volume |
65 |
Issue |
26 |
Pages |
3398-3400 |
| Keywords |
YBCO HTS HEB mixer, bandwidth |
| Abstract |
Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB. |
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0003-6951 |
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251 |
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Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
| Title |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
Type |
Journal Article |
| Year |
1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
70 |
Issue |
24 |
Pages |
3296-3298 |
| Keywords |
NbN HEB mixers, conversion loss, conversion gain, U-factor technique |
| Abstract |
We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. |
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279 |
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Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
| Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
Type |
Journal Article |
| Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
26 |
Pages |
3938-3940 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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0003-6951 |
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1579 |
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Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
| Title |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
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Journal Article |
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2000 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
76 |
Issue |
19 |
Pages |
2752-2754 |
| Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
| Abstract |
We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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856 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
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Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Journal Article |
| Year |
1998 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
19 |
Pages |
2814-2816 |
| Keywords |
NbN HEB mixers, noise temperature, local oscillator power |
| Abstract |
In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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