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| Author |
Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M. |
| Title |
Antenna – coupled superconducting electron-heating bolometer |
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Conference Article |
| Year |
1993 |
Publication |
Proc. 4th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 4th Int. Symp. Space Terahertz Technol. |
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623-628 |
| Keywords |
HEB |
Abstract  |
We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2. |
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1657 |
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Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Design and performance of the lattice-cooled hot-electron terahertz mixer |
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Journal Article |
| Year |
2000 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
88 |
Issue |
11 |
Pages |
6758-6767 |
| Keywords |
HEB mixer, charge imbalance, HF current distribution |
| Abstract |
We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance. |
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0021-8979 |
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306 |
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Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer |
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Conference Article |
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2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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39-48 |
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NbN HEB mixers |
| Abstract |
We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens. |
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305 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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Journal Article |
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1996 |
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Phys. Rev. B Condens. Matter. |
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Phys. Rev. B Condens. Matter. |
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53 |
Issue |
12 |
Pages |
R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B. |
| Title |
NbN hot-electron mixer measurements at 200 GHz |
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Conference Article |
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1995 |
Publication |
Proc. 6th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 6th Int. Symp. Space Terahertz Technol. |
| Volume |
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254-261 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present noise and gain measurements of resistively driven NbN hot-electron mixers near 200 GHz. The device geometry is chosen so that the dominant cooling process of the hot-electrons is their interaction with the lattice. Except for a single batch, the intermediate frequency cut-off of these mixer elements is – 3 700 MHz, and has shown little variation among other batches of devices. At 100 MHz we measured intrinsic mixer losses as low as —3 dB. We measured the noise temperatures at several intermediate frequencies, and for the best de- vice at 137 MHz with 20 MHz bandwidth, we measured 2000 K; using a low-noise first- stage amplifier at 1.5 GHz with 200 MHz bandwidth, the receiver noise temperature measured 2800 K. We estimate that the noise contribution from the mixer is 500 K and the total losses are —15 dB at 137 MHz. |
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