| Records |
Author  |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
| Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
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Conference Article |
| Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
| Volume |
384-3 |
Issue |
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Pages |
107-116 |
| Keywords |
2DEG, AlGaAs/GaAs |
| Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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1536 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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Journal Article |
| Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
61 |
Issue |
7 |
Pages |
591-595 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
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Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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Journal Article |
| Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
64 |
Issue |
5 |
Pages |
404-409 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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1608 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
163-166 |
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S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN |
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1603 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
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Journal Article |
| Year |
1996 |
Publication |
Surface Science |
Abbreviated Journal |
Surface Science |
| Volume |
361-362 |
Issue |
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Pages |
569-573 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. |
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0039-6028 |
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1609 |
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