| Records |
Author  |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of electron and hole binding into excitons in germanium |
Type |
Journal Article |
| Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
57 |
Issue |
2 |
Pages |
369-376 |
| Keywords |
Ge, electron and hole binding |
| Abstract |
The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
| Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
33 |
Issue |
11 |
Pages |
574 |
| Keywords |
Ge, excitons, photoconductivity |
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1718 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
| Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
50 |
Issue |
4 |
Pages |
728-734 |
| Keywords |
Ge, photoexcited carriers, shallow impurity centers |
| Abstract |
Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
| Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
Type |
Journal Article |
| Year |
1991 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
| Volume |
169 |
Issue |
1-4 |
Pages |
629-630 |
| Keywords |
impure superconductors |
| Abstract |
Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals. |
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0921-4526 |
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1682 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
| Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
Type |
Journal Article |
| Year |
1990 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
75 |
Issue |
8 |
Pages |
639-641 |
| Keywords |
impure superconductors |
| Abstract |
Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals. |
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0038-1098 |
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1687 |
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