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Author Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M.
Title Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1142-1148
Keywords (up) energy spectrum, Ge, magnetic field
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Notes Approved no
Call Number Serial 1722
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords (up) GaAs, excited donor states
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Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
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Notes Approved no
Call Number Serial 1733
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title Germanium hot-electron narrow-band detector Type Journal Article
Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics
Volume 16 Issue 8 Pages 1346
Keywords (up) Ge HEB detectors
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Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor
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Notes Approved no
Call Number Serial 1741
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Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.
Title Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure Type Journal Article
Year 1989 Publication Sov. Phys. and Technics of Semiconductors Abbreviated Journal Sov. Phys. and Technics of Semiconductors
Volume 23 Issue 8 Pages 843-846
Keywords (up) Ge, crystallography
Abstract Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
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Notes Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge Approved no
Call Number Serial 1692
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Author Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
Title Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons Type Journal Article
Year 1975 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 40 Issue 2 Pages 311-315
Keywords (up) Ge, cyclotron resonance
Abstract Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
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Notes Approved no
Call Number Serial 1768
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