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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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1982 |
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JETP Lett. |
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JETP Lett. |
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36 |
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7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M. |
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Design and performance of the lattice-cooled hot-electron terahertz mixer |
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Journal Article |
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2000 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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88 |
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11 |
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6758-6767 |
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HEB mixer, charge imbalance, HF current distribution |
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We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance. |
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0021-8979 |
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306 |
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Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
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1997 |
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Proc. 27th Eur. Microwave Conf. |
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2 |
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972-977 |
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HEB mixer, fabrication process |
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The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. |
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Title |
Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state |
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1990 |
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Sov. Supercond. |
Abbreviated Journal |
Sov. Supercond. |
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3 |
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10 |
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1582-1597 |
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HEB mixers |
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240 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Hot electron superconductive mixers |
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1993 |
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Proc. 4th Int. Symp. Space Terahertz Technol. |
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Proc. 4th Int. Symp. Space Terahertz Technol. |
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618-622 |
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HEB mixers |
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1656 |
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