| Records |
| Author |
Huebers, H.-W.; Semenov, A.; Schubert, J.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Krabbe, A.; Roeser, H.-P. |
| Title |
NbN hot-electron bolometer as THz mixer for SOFIA |
Type |
Conference Article |
| Year |
2000 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume  |
4014 |
Issue |
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Pages |
195-202 |
| Keywords |
NbN HEB mixers, airborne, stratospheric observatory, SOFIA |
| Abstract |
Heterodyne receivers for applications in astronomy need quantum limited sensitivity. We have investigated phonon- cooled NbN hot electron bolometric mixers in the frequency range from 0.7 THz to 5.2 THz. The devices were 3.5 nm thin films with an in-plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The best measured DSB receiver noise temperatures are 1300 K (0.7 THz), 2000 K (1.4 THz), 2100 K (1.6 THz), 2600 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz), and 8800 K (5.2 THz). The sensitivity fluctuation, the long term stability, and the antenna pattern were measured. The results demonstrate that this mixer is very well suited for GREAT, the German heterodyne receiver for SOFIA. |
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SPIE |
Place of Publication |
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Editor |
Melugin, R.K.; Roeser, H.-P. |
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Conference |
Airborne Telescope Systems |
| Notes |
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no |
| Call Number |
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Serial |
1554 |
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| Author |
Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W. |
| Title |
NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers |
Type |
Conference Article |
| Year |
1999 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
3828 |
Issue |
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Pages |
410-416 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed. |
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Spie |
Place of Publication |
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Editor |
Chamberlain, J.M. |
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Conference |
Terahertz Spectroscopy and Applications II |
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no |
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Serial |
1477 |
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| Author |
Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN |
Type |
Conference Article |
| Year |
1999 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
3795 |
Issue |
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Pages |
357-368 |
| Keywords |
NbN HEB mixers |
| Abstract |
We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible. |
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SPIE |
Place of Publication |
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Editor |
Hwu, R.J.; Wu, K. |
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Conference |
Terahertz and Gigahertz Photonics |
| Notes |
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Approved |
no |
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Serial |
1561 |
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| Author |
Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. |
| Title |
Hot-electron superconducting mixers for 20-500 GHz operation |
Type |
Conference Article |
| Year |
1994 |
Publication |
Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. |
Abbreviated Journal |
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| Volume |
2250 |
Issue |
4D |
Pages |
276-278 |
| Keywords |
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| Abstract |
Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. |
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no |
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RPLAB @ phisix @ |
Serial |
981 |
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| Author |
Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
| Title |
Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films |
Type |
Conference Article |
| Year |
1994 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
2160 |
Issue |
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Pages |
74-82 |
| Keywords |
YBCO HTS switches |
| Abstract |
We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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SPIE |
Place of Publication |
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Editor |
Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W. |
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Conference |
Superconductive Devices and Circuits |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1638 |
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