| Records |
| Author |
Smirnov, A. V.; Larionov, P. A.; Finkel, M. I.; Maslennikov, S. N.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
NbZr films for THz phonon-cooled HEB mixers |
Type |
Conference Article |
| Year |
2008 |
Publication |
Proc. 19th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 19th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
44-47 |
| Keywords |
HEB, NbZr, material search |
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Place of Publication |
Groningen, Netherlands |
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Serial |
577 |
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| Author |
Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Hot electron bolometer mixer for 20 – 40 THz frequency range |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
393-397 |
| Keywords |
IR NbN HEB mixers |
| Abstract |
The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. |
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Place of Publication |
Göteborg, Sweden |
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no |
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Serial |
369 |
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| Author |
Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
| Title |
Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
177-179 |
| Keywords |
directly coupled NbN HEB mixers |
| Abstract |
We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz. |
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Place of Publication |
Paris, France |
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386 |
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Gol'tsman, G.; Korneev, A.; Minaeva, O.; Antipov, A.; Divochiy, A.; Kaurova, N.; Voronov, B.; Pan, D.; Cross, A.; Pearlman, A.; Komissarov, I.; Slysz, W.; Sobolewski, R. |
| Title |
Middle-infrared to visible-light ultrafast superconducting single-photon detector |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. ASC |
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Issue |
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Pages |
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Place of Publication |
Seattle |
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no |
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RPLAB @ s @ SSPD_cavity_ASC |
Serial |
389 |
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| Author |
Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Place of Publication |
Charlottesville, Virginia, USA |
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no |
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Serial |
266 |
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