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Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. |
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Title |
Submillimeter backward wave tube spectrometer for measuring superconducting film transmission |
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Journal Article |
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Year |
1983 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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Volume |
26 |
Issue |
5 |
Pages |
134-137 |
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Keywords |
BWO spectroscopy, spectrometer, transmission |
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Abstract |
A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV |
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Russian |
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0032-8162 |
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Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок |
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1713 |
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Author |
Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. |
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Title |
Superconductive properties of ultrathin NbN films on different substrates |
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Journal Article |
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Year |
1994 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume |
7 |
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6 |
Pages |
1097-1102 |
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Keywords |
NbN films |
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A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. |
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0131-5366 |
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Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках |
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1631 |
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Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
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On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
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Journal Article |
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Year |
1996 |
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J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
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Volume |
41 |
Issue |
5 |
Pages |
408-414 |
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Keywords |
submillimeter waves, transmission |
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A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
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1064-2269 |
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Радиотехника и электроника 41, no. 4 (1996): 441-447 |
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1611 |
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Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
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Journal Article |
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Year |
1983 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
17 |
Issue |
8 |
Pages |
908-913 |
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Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
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Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
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1714 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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Journal Article |
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Year |
1982 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
36 |
Issue |
7 |
Pages |
296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A. |
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Title |
Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation |
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Conference Article |
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1994 |
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Council on Low-temp. Phys. |
Abbreviated Journal |
Council on Low-temp. Phys. |
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82-83 |
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YBCO HTS HEB |
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Dubna |
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Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994 |
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Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности |
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1632 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
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Effect of a high magnetic field on the spectrum of donors in InSb |
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1977 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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11 |
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12 |
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2373-2375 |
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InSb, energy spectrum, donors, high magnetic field |
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Воздействие сильного магнитного поля на спектр доноров в InSb |
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1729 |
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Gol'tsman, G. N.; Loudkov, D. N. |
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Terahertz superconducting hot-electron bolometer mixers and their application in radio astronomy |
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2003 |
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Radiophys. Quant. Electron. |
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46 |
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8/9 |
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604-617 |
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Keywords |
NbN HEB mixers |
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We review the latest developments, research, and radioastronomy applications of hot-electron bolometer (HEB) mixers operated in the terahertz waveband. The physical principles of operation of terahertz HEB mixers are presented, their manufacturing from ultrathin NbN films, the main HEB-mixer parameters and their measurement techniques are discussed, and practical terahertz radioastronomy projects based on heterodyne receivers with HEB mixers are considered. |
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0033-8443 |
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UDC 537.312.62 |
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472 |
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Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
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A method of optimization of the NbN superconducting single-photon detector |
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Miscellaneous |
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2004 |
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INIS |
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INIS |
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36 |
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27 |
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1-2 |
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NbN SSPD, SNSPD |
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5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION |
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Reference num. 36060124 |
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1485 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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1996 |
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Phys. Rev. B Condens. Matter. |
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Phys. Rev. B Condens. Matter. |
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53 |
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12 |
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R7592-R7595 |
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2DEG, AlGaAs/GaAs heterostructures |
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We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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