| Records |
| Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V. |
| Title |
Heating of electrons in superconductor in the resistive state due to electromagnetic radiation |
Type |
Journal Article |
| Year |
1984 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
Volume  |
50 |
Issue |
3 |
Pages |
207-212 |
| Keywords |
Nb HEB |
| Abstract |
The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields. |
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0038-1098 |
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1709 |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
Type |
Journal Article |
| Year |
1989 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
50 |
Issue |
5 |
Pages |
283-286 |
| Keywords |
YBCO HTS films |
| Abstract |
The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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1690 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
| Title |
Capture of photoexcited carriers by shallow impurity centers in germanium |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
50 |
Issue |
4 |
Pages |
728-734 |
| Keywords |
Ge, photoexcited carriers, shallow impurity centers |
| Abstract |
Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. |
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1720 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Population and lifetime of excited states of shallow impurities in Ge |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
49 |
Issue |
2 |
Pages |
355-362 |
| Keywords |
Ge, photothermal ionization, shallow impurities |
| Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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| Author |
Finkel, M. I.; Maslennikov, S. N.; Gol'tsman, G. N. |
| Title |
Terahertz heterodyne receivers based on superconductive hot-electron bolometer mixers |
Type |
Journal Article |
| Year |
2005 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
48 |
Issue |
10-11 |
Pages |
859-864 |
| Keywords |
HEB, applications |
| Abstract |
We consider recent results in development of hot-electron bolometer mixers. Special attention is paid to optimization of the contacts between the antenna and the active area of a superconducting film. An important result in the study of the parasitic effect of direct detection is obtained during the measurement of the noise temperatures by the hot/cold load method. The latest results of studies of the waveguide hot-electron bolometer mixers and their successful practical applications are considered. Progress in development of high-frequency (over 1.3 THz) heterodyne receivers for several important international projects is discussed and new submillimeter radio astronomy projects ESPRIT and SAFIR are described. |
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0033-8443 |
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381 |
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