| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
| Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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Journal Article |
| Year |
1988 |
Publication |
Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
Volume  |
14 |
Issue |
7 |
Pages |
753-763 |
| Keywords |
Nb HEB |
| Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
| Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
5 |
Pages |
185-186 |
| Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Transitions of electrons between excited states of donors in germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
2 |
Pages |
63-65 |
| Keywords |
Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
6 |
Pages |
241 |
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Ge, gamma irradiation, defects, impurities |
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1742 |
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Semenov, A. D.; Hübers, Heinz-Wilhelm; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Vachtomin, Yu. B.; Finkel, M. I.; Antipov, S. V.; Voronov, B. M.; Smirnov, K. V.; Kaurova, N. S.; Drakinski, V. N.; Gol'tsman, G. N. |
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Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
Pages |
168-171 |
| Keywords |
NbN HEB mixers |
| Abstract |
We present recent results showing the development of superconducting NbN hot-electron bolometer mixer for German receiver for astronomy at terahertz frequencies and terahertz limb sounder. The mixer is incorporated into a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and backed on a silicon lens. The hybrid antenna had almost frequency independent and symmetric radiation pattern slightly broader than expected for a diffraction limited antenna. At 2.5 THz the best 2200 K double side-band receiver noise temperature was achieved across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. For this operation regime, a receiver conversion efficiency of -17 dB was directly measured and the loss budget was evaluated. The mixer response was linear at load temperatures smaller than 400 K. Implementation of the MgO buffer layer on Si resulted in an increased 5.2 GHz gain bandwidth. The receiver was tested in the laboratory environment by measuring a methanol emission line at 2.5 THz. |
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343 |
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