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Author Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. url  doi
openurl 
  Title Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction Type Journal Article
  Year 1990 Publication Solid State Communications Abbreviated Journal Solid State Communications  
  Volume (down) 75 Issue 8 Pages 639-641  
  Keywords impure superconductors  
  Abstract Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0038-1098 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1687  
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Author Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Optical mixing in a patterned YBa2Cu3O7-δ thin film Type Journal Article
  Year 1994 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume (down) 65 Issue 26 Pages 3398-3400  
  Keywords YBCO HTS HEB mixer, bandwidth  
  Abstract Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 251  
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Author Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. url  openurl
  Title The excitonic Zeeman effect in uniaxially-strained germanium Type Journal Article
  Year 1987 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume (down) 65 Issue 6 Pages 1233-1241  
  Keywords Ge, Zeeman effect  
  Abstract We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1705  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. url  openurl
  Title Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium Type Journal Article
  Year 1986 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume (down) 64 Issue 4 Pages 889-897  
  Keywords Ge, trapping of free carriers  
  Abstract Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1707  
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
  Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume (down) 61 Issue 7 Pages 591-595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1624  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of electrons in a superconductor in the resistive state by electromagnetic radiation Type Journal Article
  Year 1984 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume (down) 59 Issue 2 Pages 442-450  
  Keywords Nb HEB  
  Abstract The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ phisix @ Serial 983  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Kinetics of electron and hole binding into excitons in germanium Type Journal Article
  Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume (down) 57 Issue 2 Pages 369-376  
  Keywords Ge, electron and hole binding  
  Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1711  
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Author Smirnov, A. V.; Baryshev, A. M.; de Bernardis, P.; Vdovin, V. F.; Gol'tsman, G. N.; Kardashev, N. S.; Kuz'min, L. S.; Koshelets, V. P.; Vystavkin, A. N.; Lobanov, Yu. V.; Ryabchun, S. A.; Finkel, M. I.; Khokhlov, D. R. doi  openurl
  Title The current stage of development of the receiving complex of the millimetron space observatory Type Journal Article
  Year 2012 Publication Radiophys. Quant. Electron. Abbreviated Journal Radiophys. Quant. Electron.  
  Volume (down) 54 Issue 8 Pages 557-568  
  Keywords Millimetron space observatory, HEB applications  
  Abstract We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1079  
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Author Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, S. I.; Vakhtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. url  doi
openurl 
  Title Characterization of a quasi-optical NbN superconducting HEB mixer Type Journal Article
  Year 2006 Publication IEEE Trans. Microwave Theory Techn. Abbreviated Journal IEEE Trans. Microwave Theory Techn.  
  Volume (down) 54 Issue 7 Pages 2944-2948  
  Keywords NbN HEB mixers  
  Abstract In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9480 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1448  
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time Type Journal Article
  Year 1996 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.  
  Volume (down) 53 Issue 12 Pages R7592-R7595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.  
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  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:9982274 Approved no  
  Call Number Serial 1612  
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