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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year (up) 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year (up) 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year (up) 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
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  Notes Approved no  
  Call Number Serial 1742  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
  Year (up) 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 16 Issue 4 Pages 161-162  
  Keywords Ge, energy spectrum, free excitons  
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  Notes Approved no  
  Call Number Serial 1736  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Submillimeter spectroscopy of semiconductors Type Journal Article
  Year (up) 1973 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 37 Issue 2 Pages 299-304  
  Keywords semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons  
  Abstract The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.  
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  Notes Approved no  
  Call Number Serial 1735  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Investigation of free excitons in Ge and their condensation at submillimeter wavelengths Type Journal Article
  Year (up) 1976 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 43 Issue 1 Pages 116-122  
  Keywords Ge, free excitons  
  Abstract Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.  
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  Notes Approved no  
  Call Number Serial 1731  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Energy spectrum of acceptors in germanium and its response to a magnetic field Type Journal Article
  Year (up) 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 4 Pages 769-776  
  Keywords p-Ge, photoconductivity, energy spectrum, magnetic field  
  Abstract We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression.  
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  Notes Approved no  
  Call Number Serial 1727  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
  Year (up) 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 3 Pages 555-565  
  Keywords Ge, GaAs, magnetic field, donors, energy spectrum  
  Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.  
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  Notes Approved no  
  Call Number Serial 1728  
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
  Year (up) 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov  
  Volume 11 Issue 12 Pages 2373-2375  
  Keywords InSb, energy spectrum, donors, high magnetic field  
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  Language Russian Summary Language Original Title  
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  Notes Воздействие сильного магнитного поля на спектр доноров в InSb Approved no  
  Call Number Serial 1729  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. url  openurl
  Title Observation of free carrier resonances in p-type germanium at submillimeter wavelengths Type Journal Article
  Year (up) 1978 Publication Sov. Phys. Solid State Abbreviated Journal Sov. Phys. Solid State  
  Volume 20 Issue 4 Pages 573-579  
  Keywords p-Ge, free carriers, resonances  
  Abstract The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1721  
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