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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M.
Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.
Volume 14 Issue 6 Pages 241
Keywords Ge, gamma irradiation, defects, impurities
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Call Number Serial 1742
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N.
Title 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers Type Conference Article
Year 2006 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6275 Issue Pages 62750I (1 to 11)
Keywords HEB, mixer, membrane
Abstract (up) A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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Call Number Serial 561
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I.
Title Submillimeter backward-wave-tube spectrometer-relaxometer Type Journal Article
Year 1987 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta
Volume 30 Issue 4 Pages 131-137
Keywords BWO, applications
Abstract (up) A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.
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Language Russian Summary Language Original Title
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Call Number Serial 1699
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract (up) A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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ISSN 1051-8223 ISBN Medium
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Call Number Serial 1595
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Author Cherednichenko, S.; Kroug, M.; Merkel, H.; Khosropanah, P.; Adam, A.; Kollberg, E.; Loudkov, D.; Gol'tsman, G.; Voronov, B.; Richter, H.; Huebers, H.-W.
Title 1.6 THz heterodyne receiver for the far infrared space telescope Type Journal Article
Year 2002 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.
Volume 372-376 Issue Pages 427-431
Keywords NbN HEB mixers, applications
Abstract (up) A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz.
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ISSN 0921-4534 ISBN Medium
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Notes Approved no
Call Number Serial 1527
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