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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N. |
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Title |
Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications |
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Conference Article |
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2005 |
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Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
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9 |
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148-153 |
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NbN HEB mixers |
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International Institute of Informatics and Systemics |
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9806560639, 9789806560635 |
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9th World Multi-Conference on Systemics, Cybernetics and Informatics |
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1480 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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Conference Article |
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2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
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NbN HEB mixers |
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We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
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Conference Article |
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1998 |
Publication |
Proc. 9th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 9th Int. Symp. Space Terahertz Technol. |
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105-114 |
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NbN HEB mixers |
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1587 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4217-4220 |
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Keywords |
NbN HEB mixers |
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NbN Hot Electron Bolometric (HEB) mixers have produced promising results in terms of DSB receiver noise temperature (2800 K at 1.56 THz). The LO source for these mixers is a gas laser pumped by a CO/sub 2/ laser and the device is quasi-optically coupled through an extended hemispherical lens and a self-complementary log-periodic toothed antenna. NbN HEBs do not require submicron dimensions, can be operated comfortably at 4.2 K or higher, and require LO power of about 100-500 nW. IF noise bandwidths of 5 GHz or greater have been demonstrated. The DC bias point is also not affected by thermal radiation at 300 K. Receiver noise temperatures below 1 THz are typically 450-600 K and are expected to gradually approach these levels above 1 THz as well. NbN HEB mixers thus are rapidly approaching the type of performance required of a rugged practical receiver for astronomy and remote sensing in the THz region. |
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1051-8223 |
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1568 |
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Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Improved characteristics of NbN HEB mixers integrated with log-periodic antennas |
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Conference Article |
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Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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200-207 |
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Keywords |
NbN HEB mixers |
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1574 |
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