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Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W. |
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Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate |
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2019 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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115 |
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10 |
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101104 |
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SSPD, SNSPD, waveguide |
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Abstract |
Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.
We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP). |
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0003-6951 |
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1185 |
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Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M. |
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Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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286-296 |
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NbN HEB mixers |
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San Diego, CA, USA |
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323 |
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Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M. |
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Antenna – coupled superconducting electron-heating bolometer |
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1993 |
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Proc. 4th Int. Symp. Space Terahertz Technol. |
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Proc. 4th Int. Symp. Space Terahertz Technol. |
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623-628 |
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HEB |
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We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2. |
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1657 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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1971 |
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JETP Lett. |
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JETP Lett. |
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14 |
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5 |
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185-186 |
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Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Title |
Broad-band terahertz NbN hot-electron bolometric mixer |
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1999 |
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Inst. Phys. Conf. |
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Inst. Phys. Conf. |
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167 |
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663-666 |
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NbN HEB mixers |
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4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999 |
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1578 |
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