| Records |
Author  |
Beck, M.; Rousseau, I.; Klammer, M.; Leiderer, P.; Mittendorff, M.; Winnerl, S.; Helm, M.; Gol'tsman, G.N.; Demsar, J. |
| Title |
Transient increase of the energy gap of superconducting NbN thin films excited by resonant narrow-band terahertz pulses |
Type |
Journal Article |
| Year |
2013 |
Publication |
Phys. Rev. Lett. |
Abbreviated Journal |
Phys. Rev. Lett. |
| Volume |
110 |
Issue |
26 |
Pages |
267003 (1 to 5) |
| Keywords |
NbN thin films, energy gap |
| Abstract |
Observations of radiation-enhanced superconductivity have thus far been limited to a few type-I superconductors (Al, Sn) excited at frequencies between the inelastic scattering rate and the superconducting gap frequency 2Delta/h. Utilizing intense, narrow-band, picosecond, terahertz pulses, tuned to just below and above 2Delta/h of a BCS superconductor NbN, we demonstrate that the superconducting gap can be transiently increased also in a type-II dirty-limit superconductor. The effect is particularly pronounced at higher temperatures and is attributed to radiation induced nonthermal electron distribution persisting on a 100 ps time scale. |
| Address |
Department of Physics and Center for Applied Photonics, University of Konstanz, D-78457, Germany |
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0031-9007 |
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PMID:23848912 |
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1370 |
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Bespalov, A.V.; Gol'tsman, G.N.; Semenov, A.D.; Renk, K.F. |
| Title |
Determination of the far-infrared emission characteristic of a cyclotron p-germanium laser by use of a superconducting Nb detector |
Type |
Journal Article |
| Year |
1991 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
| Volume |
80 |
Issue |
7 |
Pages |
503-506 |
| Keywords |
Nb detector, applications |
| Abstract |
We studied the far-infrared emission characteristics of a cyclotron p-germanium laser using a broad-band superconducting Nb film detector. For magnetic fields between ∼25 kOe and ∼50 kOe, emission in a frequency range from ∼50 cm-1 to ∼100 cm-1 with maximum intensity around 90 cm-1 was obtained. We determined, for fixed magnetic fields, electric field dependences of the emission intensity taking into account that the total electric field is a sum of the applied and the Hall electric field. An analysis of the emission intensity characteristic gives evidence that transitions between the two lowest Landau levels of light holes are responsible for the laser action. |
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0038-1098 |
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1677 |
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| Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A. |
| Title |
Superconducting UHF-limiter based on electron heating up |
Type |
Journal Article |
| Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume |
5 |
Issue |
11 |
Pages |
2164-2170 |
| Keywords |
electron heating, applications |
| Abstract |
The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described. |
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Russian |
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0235-8964 |
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1669 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
| Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
| Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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25 |
Issue |
12 |
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539-543 |
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Ge, shallow impurities, excited states |
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1726 |
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Karasik, B.S.; Milostnaya, I.I.; Zorin, M.A.; Elantev, A.I.; Gol'tsman, G.N.; Gershenzon, E.M. |
| Title |
Subnanosecond S-N and N-S switching of YBCO film induced by current pulse |
Type |
Journal Article |
| Year |
1994 |
Publication |
Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
| Volume |
235-240 |
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Pages |
1981-1982 |
| Keywords |
YBCO HTS switches |
| Abstract |
A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made. |
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0921-4534 |
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1633 |
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