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Verevkin, A.; Xu, Y.; Zheng, X.; Williams, C.; Sobolewski, Roman; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol’tsman, G. N. |
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Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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462-468 |
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NbN SSPD, SNSPD |
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1539 |
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Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol’tsman, G. N.; Elant’ev, A. I. |
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Title |
Effect of a strong magnetic field on the spectrum of donors in InSb |
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Journal Article |
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Year |
1978 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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11 |
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12 |
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1395-1397 |
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InSb, spectrum of donors, strong magnetic field |
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1725 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
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The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
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Journal Article |
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2003 |
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J. of communications technol. & electronics |
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J. of communications technol. & electronics |
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48 |
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6 |
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671-675 |
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NbN HEB mixers |
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Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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Gol’tsman, G. N.; Gershenzon, E. M. |
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Phonon-cooled hot-electron bolometric mixer: overview of recent results |
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1999 |
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Appl. Supercond. |
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Appl. Supercond. |
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6 |
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10-12 |
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649-655 |
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NbN HEB mixers |
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The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field. |
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0964-1807 |
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1564 |
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Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film |
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Conference Article |
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1993 |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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112 |
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193-195 |
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YBCO HTS detectors |
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We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1663 |
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