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Author Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. url  doi
openurl 
  Title Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer Type Journal Article
  Year 2018 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering  
  Volume 195 Issue Pages 26-31  
  Keywords  
  Abstract (up) In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0167-9317 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1155  
Permanent link to this record
 

 
Author Zhang, W.; Li, N.; Jiang, L.; Ren, Y.; Yao, Q.-J.; Lin, Z.-H.; Shi, S.-C.; Voronov, B. M.; Gol’tsman, G. N. url  doi
openurl 
  Title Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement Type Conference Article
  Year 2008 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 6840 Issue Pages 684007 (1 to 8)  
  Keywords NbN HEB mixers, noise temperature, LO power  
  Abstract (up) It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Zhang, C.; Zhang, X.-C.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Terahertz Photonics  
  Notes Approved no  
  Call Number Serial 1415  
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Author Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K. url  doi
openurl 
  Title Achieving high counting rates in superconducting nanowire single-photon detectors Type Conference Article
  Year 2006 Publication CLEO/QELS Abbreviated Journal CLEO/QELS  
  Volume Issue Pages JTuD3 (1 to 2)  
  Keywords SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors  
  Abstract (up) Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Optical Society of America Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies  
  Notes Approved no  
  Call Number Serial 1451  
Permanent link to this record
 

 
Author Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. url  doi
openurl 
  Title Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths Type Journal Article
  Year 1997 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 70 Issue 12 Pages 1619-1621  
  Keywords NbN HEB mixers  
  Abstract (up) Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1599  
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Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. url  openurl
  Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type Journal Article
  Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics  
  Volume 48 Issue 6 Pages 671-675  
  Keywords NbN HEB mixers  
  Abstract (up) Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.  
  Address  
  Corporate Author Thesis  
  Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no  
  Call Number Vakhtomin2003 Serial 1522  
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