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Author Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.
Title Counting photons using a nanonetwork of superconducting wires Type Conference Article
Year 2009 Publication Nano-Net Abbreviated Journal
Volume Issue Pages 120-122
Keywords SSPD, SNSPD
Abstract We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
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Corporate Author Thesis
Publisher Springer Berlin Heidelberg Place of Publication Berlin, Heidelberg Editor Cheng, M.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-3-642-02427-6 ISBN Medium (up)
Area Expedition Conference
Notes Approved no
Call Number 10.1007/978-3-642-02427-6_20 Serial 1242
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Author Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R.
Title Ultrafast and high quantum efficiency large-area superconducting single-photon detectors Type Conference Article
Year 2007 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6583 Issue Pages 65830I (1 to 9)
Keywords SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors
Abstract We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped  0.5-mm-long and  100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of  30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.
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Corporate Author Thesis
Publisher Spie Place of Publication Editor Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium (up)
Area Expedition Conference
Notes Approved no
Call Number Serial 1249
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Author Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N.
Title Superconducting hot electron bolometer mixer for middle IR range Type Conference Article
Year 2006 Publication Proc. 16th Int. Crimean Microwave and Telecommunication Technology Abbreviated Journal Proc. 16th Int. Crimean Microwave and Telecommunication Technology
Volume 2 Issue Pages 686-687
Keywords IR NbN HEB mixer, detector, GaAs substrate
Abstract The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium (up)
Area Expedition Conference
Notes Approved no
Call Number 4023440 Serial 1297
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Author Korneev, A.; Semenov, A.; Vodolazov, D.; Gol’tsman, G. N.; Sobolewski, R.
Title Physics and operation of superconducting single-photon devices Type Book Chapter
Year 2017 Publication Superconductors at the Nanoscale Abbreviated Journal
Volume Issue Pages 279-308
Keywords
Abstract
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Corporate Author Thesis
Publisher De Gruyter Place of Publication Editor Wördenweber, R.; Moshchalkov, V.; Bending, S.; Tafuri, F.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium (up)
Area Expedition Conference
Notes Approved no
Call Number Serial 1326
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Author Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M.
Title Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers Type Journal Article
Year 2017 Publication IEEE Trans. Terahertz Sci. Technol. Abbreviated Journal IEEE Trans. Terahertz Sci. Technol.
Volume 7 Issue 1 Pages 53-59
Keywords NbN HEB mixer
Abstract In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-3446 ISBN Medium (up)
Area Expedition Conference
Notes Approved no
Call Number Serial 1330
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