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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
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Title |
Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
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Year |
2012 |
Publication |
Tech. Phys. |
Abbreviated Journal |
Tech. Phys. |
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Volume |
57 |
Issue |
7 |
Pages |
971-974 |
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Keywords |
semiconducting superlattice frequency multiplier, NbN HEB mixers |
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We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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1378 |
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Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. |
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Title |
Superconducting hot-electron bolometer mixer as element of thermal imager matrix |
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Journal Article |
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Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
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Volume |
36 |
Issue |
11 |
Pages |
1006-1008 |
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Keywords |
HEB mixers |
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The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. |
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1063-7850 |
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1390 |
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Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. |
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Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm |
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Journal Article |
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2010 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
97 |
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13 |
Pages |
131907 (1 to 3) |
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Keywords |
SSPD, SNSPD, InAsP/InP quantum dots |
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By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. |
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0003-6951 |
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1238 |
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Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. |
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Title |
Superconducting single photon nanowire detectors development for IR and THz applications |
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Journal Article |
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Year |
2008 |
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J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
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151 |
Issue |
1-2 |
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591-596 |
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Keywords |
NbN SSPD, SNSPD |
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We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained. |
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0022-2291 |
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1244 |
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Shurakov, A.; Mikhalev, P.; Mikhailov, D.; Mityashkin, V.; Tretyakov, I.; Kardakova, A.; Belikov, I.; Kaurova, N.; Voronov, B.; Vasil’evskii, I.; Gol’tsman, G. |
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Title |
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer |
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Journal Article |
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2018 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
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195 |
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26-31 |
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In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range. |
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0167-9317 |
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1155 |
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