| Records |
| Author |
An, P.; Kovalyuk, V.; Golikov, A.; Zubkova, E.; Ferrari, S.; Korneev, A.; Pernice, W.; Goltsman, G. |
Title  |
Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051047 |
| Keywords |
planar O-ring resonators, Q-factor |
| Abstract |
In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3 |
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1742-6588 |
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1191 |
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Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
| Title |
Integration of nanodiamonds with NV-centers on optical silicon nitride structures |
Type |
Conference Article |
| Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
220 |
Issue |
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Pages |
03013 |
| Keywords |
nanodiamonds, NV-centers, Si3N4 |
| Abstract |
In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. |
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2100-014X |
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1190 |
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Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
| Title |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
Type |
Conference Article |
| Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
220 |
Issue |
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Pages |
03012 |
| Keywords |
e-beam lithography, Si3N4 |
| Abstract |
In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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2100-014X |
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no |
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1189 |
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Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
| Title |
Optimization of on-chip photonic delay lines for telecom wavelengths |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051052 |
| Keywords |
optical delay lines |
| Abstract |
In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm. |
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1742-6588 |
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no |
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1196 |
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Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
| Title |
Response of graphene based gated nanodevices exposed to THz radiation |
Type |
Conference Article |
| Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
| Volume |
103 |
Issue |
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Pages |
10003 (1 to 2) |
| Keywords |
graphene field-effect transistor, FET |
| Abstract |
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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no |
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1350 |
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