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Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Title |
Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs |
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Conference Article |
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2015 |
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EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
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103 |
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10004 (1 to 2) |
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SSPD, SNSPD |
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We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model. |
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2100-014X |
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1351 |
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Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
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Title |
Response of graphene based gated nanodevices exposed to THz radiation |
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Conference Article |
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Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
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103 |
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10003 (1 to 2) |
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graphene field-effect transistor, FET |
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In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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Korneev, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Pernice, W.; An, P.; Golikov, A.; Zubkova, E.; Goltsman, G. |
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Title |
Superconducting Single-Photon Detectors for Integrated Nanophotonics Circuits |
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Conference Article |
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2017 |
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16th ISEC |
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16th ISEC |
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1-3 |
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SSPD, SNSPD |
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We present an overview of our recent achievements in integration of superconducting nanowire single-photon detectors SNSPD with dielectric optical waveguides. We are able to produce complex nanophotonics integrated circuits containing optical elements and photon detector on single chip thus producing a compact integrated platform for quantum optics applications. |
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8314200 |
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1200 |
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An, P.; Kovalyuk, V.; Golikov, A.; Zubkova, E.; Ferrari, S.; Korneev, A.; Pernice, W.; Goltsman, G. |
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Title |
Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing |
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Conference Article |
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2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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1124 |
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051047 |
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planar O-ring resonators, Q-factor |
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In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3 |
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1742-6588 |
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1191 |
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Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G. |
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Title |
Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051051 |
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Keywords |
O-ring resonator |
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Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip. |
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1742-6588 |
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1193 |
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