| Records |
| Author |
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
| Title |
Response of graphene based gated nanodevices exposed to THz radiation |
Type |
Conference Article |
| Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal  |
EPJ Web of Conferences |
| Volume |
103 |
Issue |
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Pages |
10003 (1 to 2) |
| Keywords |
graphene field-effect transistor, FET |
| Abstract |
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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1350 |
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Wild, W.; Kardashev, N. S.; Likhachev, S. F.; Babakin, N. G.; Arkhipov, V. Y.; Vinogradov, I. S.; Andreyanov, V. V.; Fedorchuk, S. D.; Myshonkova, N. V.; Alexsandrov, Y. A.; Novokov, I. D.; Goltsman, G. N.; Cherepaschuk, A. M.; Shustov, B. M.; Vystavkin, A. N.; Koshelets, V. P.; Vdovin, V.F.; de Graauw, T.; Helmich, F.; vd Tak, F.; Shipman, R.; Baryshev, A.; Gao, J. R.; Khosropanah, P.; Roelfsema, P.; Barthel, P.; Spaans, M.; Mendez, M.; Klapwijk, T.; Israel, F.; Hogerheijde, M.; vd Werf, P.; Cernicharo, J.; Martin-Pintado, J.; Planesas, P.; Gallego, J. D.; Beaudin, G.; Krieg, J. M.; Gerin, M.; Pagani, L.; Saraceno, P.; Di Giorgio, A. M.; Cerulli, R.; Orfei, R.; Spinoglio, L.; Piazzo, L.; Liseau, R.; Belitsky, V.; Cherednichenko, S.; Poglitsch, A.; Raab, W.; Guesten, R.; Klein, B.; Stutzki, J.; Honingh, N.; Benz, A.; Murphy, A.; Trappe, N.; Räisänen, A. |
| Title |
Millimetron—a large Russian-European submillimeter space observatory |
Type |
Journal Article |
| Year |
2009 |
Publication |
Exp. Astron. |
Abbreviated Journal |
Exp. Astron. |
| Volume |
23 |
Issue |
1 |
Pages |
221-244 |
| Keywords |
Millimetron space observatory, VLBI, very long baseline interferometry |
| Abstract |
Millimetron is a Russian-led 12 m diameter submillimeter and far-infrared space observatory which is included in the Space Plan of the Russian Federation for launch around 2017. With its large collecting area and state-of-the-art receivers, it will enable unique science and allow at least one order of magnitude improvement with respect to the Herschel Space Observatory. Millimetron will be operated in two basic observing modes: as a single-dish observatory, and as an element of a ground-space very long baseline interferometry (VLBI) system. As single-dish, angular resolutions on the order of 3 to 12 arc sec will be achieved and spectral resolutions of up to a million employing heterodyne techniques. As VLBI antenna, the chosen elliptical orbit will provide extremely large VLBI baselines (beyond 300,000 km) resulting in micro-arc second angular resolution. |
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0922-6435 |
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1402 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
| Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
Type |
Journal Article |
| Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
| Volume |
22 |
Issue |
3 |
Pages |
540-543 |
| Keywords |
Ge, free holes, capture |
| Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Russian |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Korneev, A. A.; Korneeva, Y. P.; Mikhailov, M. Yu.; Pershin, Y. P.; Semenov, A. V.; Vodolazov, D. Yu.; Divochiy, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Yu.; Goltsman, G. N. |
| Title |
Characterization of MoSi superconducting single-photon detectors in the magnetic field |
Type |
Journal Article |
| Year |
2015 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
25 |
Issue |
3 |
Pages |
2200504 (1 to 4) |
| Keywords |
SSPD, SNSPD |
| Abstract |
We investigate the response mechanism of nanowire superconducting single-photon detectors (SSPDs) made of amorphous MoxSi1-x. We study the dependence of photon count and dark count rates on bias current in magnetic fields up to 113 mT at 1.7 K temperature. The observed behavior of photon counts is similar to the one recently observed in NbN SSPDs. Our results show that the detecting mechanism of relatively high-energy photons does not involve the vortex penetration from the edges of the film, and on the contrary, the detecting mechanism of low-energy photons probably involves the vortex penetration from the film edges. |
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RPLAB @ akorneev @ KorneevIEEE2015 |
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991 |
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Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M. |
| Title |
Slow electron–phonon cooling in superconducting diamond films |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-4 |
| Keywords |
superconducting diamond films, electron-phonon cooling |
| Abstract |
We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers. |
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1051-8223 |
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1168 |
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