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Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
Volume | 132 | Issue | 2 | Pages | 2 |
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Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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Author | Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. | ||||
Title | Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder | Type | Miscellaneous | ||
Year | 2019 | Publication | arXiv | Abbreviated Journal | arXiv |
Volume | Issue | Pages | 1-10 | ||
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Abstract | We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1278 | |||
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Author | Goltsman, G. N. | ||||
Title | Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications | Type | Abstract | ||
Year | 2006 | Publication | 31nd IRMW / 14th ICTE | Abbreviated Journal | 31nd IRMW / 14th ICTE |
Volume | Issue | Pages | 177 | ||
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Area | Expedition | Conference | Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics | ||
Notes | Approved | no | |||
Call Number | Serial | 1443 | |||
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Author | Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. | ||||
Title | Receiver measurements of pHEB beam lead mixers on 3-μm silicon | Type | Conference Article | ||
Year | 2005 | Publication | Proc. 30th IRMMW / 13th THz | Abbreviated Journal | Proc. 30th IRMMW / 13th THz |
Volume | Issue | Pages | 271-272 | ||
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Abstract | We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. | ||||
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Area | Expedition | Conference | Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics | ||
Notes | Approved | no | |||
Call Number | Serial | 1460 | |||
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Author | Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. | ||||
Title | A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure | Type | Journal Article | ||
Year | 2005 | Publication | Semicond. | Abbreviated Journal | Semicond. |
Volume | 39 | Issue | 9 | Pages | 1082-1086 |
Keywords | 2D electron gas, AlGaAs/GaAs heterostructures, mixers | ||||
Abstract | Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. | ||||
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ISSN | 1063-7826 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1463 | |||
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Author | Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. | ||||
Title | Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range | Type | Conference Article | ||
Year | 1997 | Publication | Proc. 4-th Int. Semicond. Device Research Symp. | Abbreviated Journal | Proc. 4-th Int. Semicond. Device Research Symp. |
Volume | Issue | Pages | 55-58 | ||
Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1602 | |||
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Author | Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. | ||||
Title | Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid | Type | Journal Article | ||
Year | 2020 | Publication | J. Luminescence | Abbreviated Journal | J. Luminescence |
Volume | 220 | Issue | Pages | 117008 (1 to 7) | |
Keywords | Ag2S QD, quantum dots | ||||
Abstract | The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. | ||||
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ISSN | 0022-2313 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1267 | |||
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Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. | ||||
Title | Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements | Type | Journal Article | ||
Year | 2011 | Publication | Semicond. Sci. Technol. | Abbreviated Journal | Semicond. Sci. Technol. |
Volume | 26 | Issue | 2 | Pages | 025013 |
Keywords | AlGaAs/GaAs heterojunctions | ||||
Abstract | We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. | ||||
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ISSN | 0268-1242 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1215 | |||
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Author | Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. | ||||
Title | Relaxation of the resistive superconducting state in boron-doped diamond films | Type | Journal Article | ||
Year | 2016 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
Volume | 93 | Issue | 6 | Pages | 064506 |
Keywords | boron-doped diamond films, resistive superconducting state, relaxation time | ||||
Abstract | We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. | ||||
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ISSN | 2469-9950 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1167 | |||
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Author | Iomdina, E. N.; Goltsman, G. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A. | ||||
Title | Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range | Type | Journal Article | ||
Year | 2016 | Publication | J. Biomed. Opt. | Abbreviated Journal | J. Biomed. Opt. |
Volume | 21 | Issue | 9 | Pages | 97002 (1 to 5) |
Keywords | BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology | ||||
Abstract | An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application. | ||||
Address | Moscow State Pedagogical University, Department of Physics, 29 Malaya Pirogovskaya Street, Moscow 119435, Russia | ||||
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Language | English | Summary Language | Original Title | ||
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ISSN | 1083-3668 | ISBN | Medium | ||
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Notes | PMID:27626901 | Approved | no | ||
Call Number | Serial | 1335 | |||
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