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Author Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. openurl 
  Title Superconducting diamond films as perspective material for direct THz detectors Type Abstract
  Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 82  
  Keywords KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP  
  Abstract Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013.  
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  Call Number Serial 1173  
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Author Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. url  doi
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  Title NbN nanowire superconducting single-photon detector for mid-infrared Type Journal Article
  Year 2012 Publication Phys. Procedia Abbreviated Journal Phys. Procedia  
  Volume 36 Issue Pages 72-76  
  Keywords NbN SSPD, SNSPD  
  Abstract Superconducting single-photon detectors (SSPD) is typically 100 nm-wide supercondiucting strip in a shape of meander made of 4-nm-thick film. To reduce response time and increase voltage response a parallel connection of the strips was proposed. Recently we demonstrated that reduction of the strip width improves the quantum effciency of such a detector at wavelengths longer than 1.5 μm. Being encourage by this progress in quantum effciency we improved the fabrication process and made parallel-wire SSPD with 40-nm-wide strips covering total area of 10 μm x 10 μm. In this paper we present the results of the characterization of such a parallel-wire SSPD at 10.6 μm wavelength and demonstrate linear dependence of the count rate on the light power as it should be in case of single-photon response.  
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  ISSN 1875-3892 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1382  
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Author Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. url  doi
openurl 
  Title Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter Type Abstract
  Year 2010 Publication 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves Abbreviated Journal  
  Volume Issue Pages 1-1  
  Keywords SSPD, SNSPD, HEB  
  Abstract We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications.  
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  ISSN 2162-2027 ISBN Medium  
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  Notes Approved no  
  Call Number RPLAB @ sasha @ goltsman2010superconducting Serial 1028  
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Author Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G. url  doi
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  Title Study of silicon nitride O-ring resonator for gas-sensing applications Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012124  
  Keywords silicon nitride O-ring resonator, ORR  
  Abstract In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1176  
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Author Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G. url  doi
openurl 
  Title Superconducting photon number resolving counter for near infrared applications Type Conference Article
  Year 2008 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 7138 Issue Pages 713828 (1 to 5)  
  Keywords PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared  
  Abstract We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate.  
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  Publisher Spie Place of Publication Editor Tománek, P.; Senderáková, D.; Hrabovský, M.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number 10.1117/12.818079 Serial 1241  
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