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Author Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. url  openurl
  Title Gap frequency and photon absorption in a hot electron bolometer Type Conference Article
  Year 2016 Publication Proc. 27th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 27th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 121  
  Keywords (down) NbN HEB; Si membrane  
  Abstract The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015.  
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  Notes Approved no  
  Call Number Serial 1204  
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Author Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. url  doi
openurl 
  Title High resolution THz gas spectrometer based on semiconductor and superconductor devices Type Conference Article
  Year 2017 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 132 Issue Pages 02001 (1 to 2)  
  Keywords (down) NbN HEB mixers, detectors, THz spectroscopy  
  Abstract The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.  
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  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1328  
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Author Baubert, J.; Salez, M.; Merkel, H.; Pons, P.; Cherednichenko, S.; Lecomte, B.; Drakinsky, V.; Goltsman, G.; Leone, B. url  doi
openurl 
  Title IF gain bandwidth of membrane-based NbN hot electron bolometers for SHAHIRA Type Journal Article
  Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 15 Issue 2 Pages 507-510  
  Keywords (down) NbN HEB mixers, applications  
  Abstract SHAHIRA (Submm Heterodyne Array for HIgh-speed Radio Astronomy) is a project supported by the European Space Agency (ESA) and is designed to fly on the SOFIA observatory. A quasi-optic design has been chosen for 2.5/2.7 THz and 4.7 THz, for hydroxyde radical OH, deuterated hydrogen HD and neutral atomic oxygen OI lines observations. Hot electron bolometers (HEBs) have been processed on 1 /spl mu/m thick SiO/sub 2//Si/sub 3/N/sub 4/ stress-less membranes. In this paper we analyse the intermediate frequency (IF) gain bandwidth from the theoretical point of view, and compare it to measurements.  
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  Series Volume Series Issue Edition  
  ISSN 1558-2515 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1468  
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Author Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. url  doi
openurl 
  Title Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz Type Conference Article
  Year 2004 Publication Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW  
  Volume 2 Issue Pages 592-594  
  Keywords (down) NbN HEB mixers  
  Abstract To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz.  
  Address Kharkov, Ukraine  
  Corporate Author Thesis  
  Publisher Place of Publication Kharkov, Ukraine Editor  
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  Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)  
  Notes Approved no  
  Call Number Serial 351  
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Author Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. url  doi
openurl 
  Title Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers Type Journal Article
  Year 2014 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 27 Issue 8 Pages 085013 (1 to 5)  
  Keywords (down) NbN HEB mixers  
  Abstract In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1358  
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