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| Author | Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
| Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 132 | Issue | 2 | Pages | 2 |
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| Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Status Solidi RRL | Abbreviated Journal | Phys. Status Solidi RRL |
| Volume | 13 | Issue | 9 | Pages | 1900187-(1-6) |
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| Abstract | For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. | ||||
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| ISSN | 1862-6254 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1149 | |||
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| Author | Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder | Type | Miscellaneous | ||
| Year | 2019 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | Issue | Pages | 1-10 | ||
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| Abstract | We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1278 | |||
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| Author | Goltsman, G. N. | ||||
| Title | Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications | Type | Abstract | ||
| Year | 2006 | Publication | 31nd IRMW / 14th ICTE | Abbreviated Journal | 31nd IRMW / 14th ICTE |
| Volume | Issue | Pages | 177 | ||
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| Area | Expedition | Conference | Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1443 | |||
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| Author | Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. | ||||
| Title | Receiver measurements of pHEB beam lead mixers on 3-μm silicon | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. 30th IRMMW / 13th THz | Abbreviated Journal | Proc. 30th IRMMW / 13th THz |
| Volume | Issue | Pages | 271-272 | ||
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| Abstract | We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. | ||||
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| Area | Expedition | Conference | Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1460 | |||
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