| Records |
| Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
| Title |
Investigation of population and ionization of donor excited states in Ge |
Type |
Conference Article |
| Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
| Volume |
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Issue |
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Pages |
631-634 |
Keywords  |
Ge, donor excited states |
| Abstract |
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| Address |
Amsterdam |
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Thesis |
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| Publisher |
North-Holland Publishing Co. |
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no |
| Call Number |
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Serial |
1732 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N. |
| Title |
Zeeman effect in excited-states of donors in germanium |
Type |
Journal Article |
| Year |
1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
6 |
Issue |
3 |
Pages |
509 |
| Keywords |
Ge, donors, Zeeman effect |
| Abstract |
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| Publisher |
Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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Approved |
no |
| Call Number |
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Serial |
1737 |
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| Author |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
| Title |
Population of excited-states of small admixtures in germanium |
Type |
Conference Article |
| Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
| Keywords |
Ge, excited states, admixtures |
| Abstract |
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Thesis |
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| Publisher |
Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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no |
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Serial |
1723 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
Type |
Journal Article |
| Year |
1982 |
Publication |
Optics and Spectroscopy |
Abbreviated Journal |
Optics and Spectroscopy |
| Volume |
52 |
Issue |
4 |
Pages |
454-455 |
| Keywords |
Ge, exciton photoconduction |
| Abstract |
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no |
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Serial |
1715 |
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| Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
| Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
Type |
Journal Article |
| Year |
1988 |
Publication |
Fizika i Tekhnika Poluprovodnikov |
Abbreviated Journal |
Fizika i Tekhnika Poluprovodnikov |
| Volume |
22 |
Issue |
3 |
Pages |
540-543 |
| Keywords |
Ge, free holes, capture |
| Abstract |
Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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| Language |
Russian |
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| Notes |
Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
Approved |
no |
| Call Number |
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Serial |
1698 |
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