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Author Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. doi  openurl
  Title Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system Type Conference Article
  Year 2017 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences  
  Volume 132 Issue 2 Pages 2  
  Keywords (up)  
  Abstract Recently bright-light control of the SSPD has been

demonstrated. This attack employed a “backdoor” in the detector biasing

scheme. Under bright-light illumination, SSPD becomes resistive and

remains “latched” in the resistive state even when the light is switched off.

While the SSPD is latched, Eve can simulate SSPD single-photon response

by sending strong light pulses, thus deceiving Bob. We developed the

experimental setup for investigation of a dependence on latching threshold

of SSPD on optical pulse length and peak power. By knowing latching

threshold it is possible to understand essential requirements for

development countermeasures against blinding attack on quantum key

distribution system with SSPDs.		  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1116  
Permanent link to this record
 
 
Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Journal Article
  Year 2019 Publication Phys. Status Solidi RRL Abbreviated Journal Phys. Status Solidi RRL  
  Volume 13 Issue 9 Pages 1900187-(1-6)  
  Keywords (up)  
  Abstract For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6254 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1149  
Permanent link to this record
 
 
Author Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. url  openurl
  Title Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder Type Miscellaneous
  Year 2019 Publication arXiv Abbreviated Journal arXiv  
  Volume Issue Pages 1-10  
  Keywords (up)  
  Abstract We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1278  
Permanent link to this record
 
 
Author Goltsman, G. N. url  doi
openurl 
  Title Submillimeter superconducting receivers for astronomy, atmospheric studies and other applications Type Abstract
  Year 2006 Publication 31nd IRMW / 14th ICTE Abbreviated Journal 31nd IRMW / 14th ICTE  
  Volume Issue Pages 177  
  Keywords (up)  
  Abstract  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics  
  Notes Approved no  
  Call Number Serial 1443  
Permanent link to this record
 
 
Author Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. url  doi
openurl 
  Title Receiver measurements of pHEB beam lead mixers on 3-μm silicon Type Conference Article
  Year 2005 Publication Proc. 30th IRMMW / 13th THz Abbreviated Journal Proc. 30th IRMMW / 13th THz  
  Volume Issue Pages 271-272  
  Keywords (up)  
  Abstract We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.  
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  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics  
  Notes Approved no  
  Call Number Serial 1460  
Permanent link to this record
 
 
Author Goltsman, G. url  openurl
  Title Simple method for stabilizing power of submillimetric spectrometer Type Journal Article
  Year 1972 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume Issue 1 Pages 136  
  Keywords (up)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1738  
Permanent link to this record
 
 
Author Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. url  doi
openurl 
  Title A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure Type Journal Article
  Year 2005 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 39 Issue 9 Pages 1082-1086  
  Keywords (up) 2D electron gas, AlGaAs/GaAs heterostructures, mixers  
  Abstract Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1463  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  openurl
  Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 55-58  
  Keywords (up) 2DEG, AlGaAs/GaAs heterostructures  
  Abstract  
  Address  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1602  
Permanent link to this record
 
 
Author Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. url  doi
openurl 
  Title Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid Type Journal Article
  Year 2020 Publication J. Luminescence Abbreviated Journal J. Luminescence  
  Volume 220 Issue Pages 117008 (1 to 7)  
  Keywords (up) Ag2S QD, quantum dots  
  Abstract The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2313 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1267  
Permanent link to this record
 
 
Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
isbn  openurl
  Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
  Year 2019 Publication IRMMW-THz Abbreviated Journal  
  Volume Issue Pages  
  Keywords (up) Ag2S quantum dots  
  Abstract A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2162-2035 ISBN 978-1-5386-8285-2 Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 8874267 Serial 1286  
Permanent link to this record
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