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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords (up) GaAs, excited donor states  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1733  
Permanent link to this record
 

 
Author Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. url  doi
openurl 
  Title Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations Type Journal Article
  Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances  
  Volume 9 Issue 10 Pages 105220  
  Keywords (up) GaAs/AlGaAs superlattice, SL, NbN HEB  
  Abstract Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.  
  Address  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2158-3226 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1274  
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. url  openurl
  Title Germanium hot-electron narrow-band detector Type Journal Article
  Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics  
  Volume 16 Issue 8 Pages 1346  
  Keywords (up) Ge HEB detectors  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1741  
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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. url  openurl
  Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
  Year 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya  
  Volume 50 Issue Pages 280-281  
  Keywords (up) Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0367-6755 ISBN Medium  
  Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985  
  Notes Approved no  
  Call Number Serial 1708  
Permanent link to this record
 

 
Author Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. url  openurl
  Title Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure Type Journal Article
  Year 1989 Publication Sov. Phys. and Technics of Semiconductors Abbreviated Journal Sov. Phys. and Technics of Semiconductors  
  Volume 23 Issue 8 Pages 843-846  
  Keywords (up) Ge, crystallography  
  Abstract Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.  
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  Area Expedition Conference  
  Notes Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge Approved no  
  Call Number Serial 1692  
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