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Author |
Goltsman, G. N. |
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Title |
Ultrafast nanowire superconducting single-photon detector with photon number resolving capability |
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Conference Article |
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Year |
2009 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
7236 |
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72360D (1 to 11) |
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Keywords |
PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films |
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Abstract |
In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time. |
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SPIE |
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Arakawa, Y.; Sasaki, M.; Sotobayashi, H. |
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1403 |
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Smirnov, K. V.; Vachtomin, Y. B.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Korneev, A. A.; Goltsman, G. N. |
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Title |
Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography |
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Conference Article |
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Year |
2008 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
7138 |
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Pages |
713827 (1 to 6) |
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Keywords |
SSPD, SNSPD, superconducting single photon detector, ultra-thin superconducting films, optical fiber coupling, ready to use receiver |
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Abstract |
At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (TC=10-11 K, jC= 5-7•106 A/cm2); the sensitive area dimensions are 10×10 μm2. The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 μm), >4 % (at 1.55 μm); dark counts rate ≤1 s-1; duration of voltage pulse ≤5 ns; jitter ≤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar. |
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Spie |
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Tománek, P.; Senderáková, D.; Hrabovský, M. |
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1405 |
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Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R. |
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Title |
Advanced nanostructured optical NbN single-photon detector operated at 2.0 K |
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Conference Article |
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Year |
2005 |
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Proc. SPIE |
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Proc. SPIE |
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Volume |
5732 |
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Pages |
520-529 |
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NbN SSPD, SNSPD |
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We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography. |
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Spie |
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Razeghi, M.; Brown, G.J. |
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Quantum Sensing and Nanophotonic Devices II |
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1478 |
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Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N. |
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Title |
Ultrafast superconducting single-photon optical detectors |
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Conference Article |
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Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
5123 |
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1-11 |
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Keywords |
NbN SSPD, SNSPD |
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We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography. |
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SPIE |
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Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A. |
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Advanced Optical Devices, Technologies, and Medical Applications |
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1513 |
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Author |
Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. |
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Title |
Membrane-based HEB mixer for THz applications |
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Conference Article |
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Year |
2003 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
5116 |
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551-562 |
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membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications |
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Abstract |
We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. |
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SPIE |
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Chiao, J.-C.; Varadan, V.K.; Cané, C. |
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Smart Sensors, Actuators, and MEMS |
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1520 |
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