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Author Baeva, E.; Sidorova, M.; Korneev, A.; Goltsman, G.
Title Precise measurement of the thermal conductivity of superconductor Type Conference Article
Year 2018 Publication (down) Proc. AIP Conf. Abbreviated Journal Proc. AIP Conf.
Volume 1936 Issue 1 Pages 020003 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract Measuring the thermal properties such as the heat capacity provide information about intrinsic mechanisms operated inside. In general, the ratio between electron and phonon specific heat Ce/Cp shows how the absorbed energy shared between electron and phonon subsystems. In this work we make estimations for amplitude-modulated absorption of THz radiation technique for investigation of the ratio Ce/Cp in superconducting Niobium Nitride (NbN) at T = Tc. Our results indicates that experimentally the frequency of modulation has to be extra large to extract the quantity. We perform a new technique allowed to work at low frequency with accurately measurement of absorbed power.
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Call Number doi:10.1063/1.5025441 Serial 1311
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Author Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N.
Title Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz Type Conference Article
Year 2004 Publication (down) Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW
Volume 2 Issue Pages 592-594
Keywords NbN HEB mixers
Abstract To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz.
Address Kharkov, Ukraine
Corporate Author Thesis
Publisher Place of Publication Kharkov, Ukraine Editor
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Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
Notes Approved no
Call Number Serial 351
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
Year 1997 Publication (down) Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 55-58
Keywords 2DEG, AlGaAs/GaAs heterostructures
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Call Number Serial 1602
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Author Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N.
Title Bandwidth performance of a THz normal metal TiN bolometer-mixer Type Conference Article
Year 2019 Publication (down) Proc. 30th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 30th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 102-103
Keywords TiN normal metal bolometer, NMB
Abstract We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
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Call Number Serial 1279
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Author Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N.
Title Receiver measurements of pHEB beam lead mixers on 3-μm silicon Type Conference Article
Year 2005 Publication (down) Proc. 30th IRMMW / 13th THz Abbreviated Journal Proc. 30th IRMMW / 13th THz
Volume Issue Pages 271-272
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Abstract We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
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Area Expedition Conference Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics
Notes Approved no
Call Number Serial 1460
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