| |
Records |
Links |
|
Author |
Korneeva, Y. P.; Mikhailov, M. Y.; Pershin, Y. P.; Manova, N. N.; Divochiy, A. V.; Vakhtomin, Y. B.; Korneev, A. A.; Smirnov, K. V.; Sivakov, A. G.; Devizenko, A. Y.; Goltsman, G. N. |
|
| |
Title |
Superconducting single-photon detector made of MoSi film |
Type |
Journal Article |
| |
Year |
2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
|
| |
Volume |
27 |
Issue |
9 |
Pages |
095012 |
|
| |
Keywords |
SSPD, SNSPD |
|
| |
Abstract |
We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher  |
IOP Publishing |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0953-2048 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
RPLAB @ sasha @ korneeva2014superconducting |
Serial |
1044 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
|
| |
Title |
Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
Type |
Journal Article |
| |
Year |
2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
|
| |
Volume |
32 |
Issue |
7 |
Pages |
075003 |
|
| |
Keywords |
NbN HEB mixer, GaN buffer layer, sapphire substrate |
|
| |
Abstract |
We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
IOP Publishing |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
Antipov_2019 |
Serial |
1277 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. |
|
| |
Title |
Attojoule energy resolution of direct detector based on hot electron bolometer |
Type |
Conference Article |
| |
Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
|
| |
Volume |
741 |
Issue |
|
Pages |
012165 (1 to 5) |
|
| |
Keywords |
NbN HEB detector |
|
| |
Abstract |
We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
IOP Publishing |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
Seliverstov_2016 |
Serial |
1337 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Goltsman, G. N. |
|
| |
Title |
Zeeman effect in excited-states of donors in germanium |
Type |
Journal Article |
| |
Year |
1972 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
|
| |
Volume |
6 |
Issue |
3 |
Pages |
509 |
|
| |
Keywords |
Ge, donors, Zeeman effect |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1737 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
|
| |
Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
| |
Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
|
| |
Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
|
| |
Keywords |
GaAs, excited donor states |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1733 |
|
| Permanent link to this record |
