toggle visibility Search & Display Options

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume (down) 220 Issue Pages 02009  
  Keywords grating coupler, SiO2  
  Abstract The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1188  
Permanent link to this record
 

 
Author Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume (down) 220 Issue Pages 03012  
  Keywords e-beam lithography, Si3N4  
  Abstract In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1189  
Permanent link to this record
 

 
Author Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Integration of nanodiamonds with NV-centers on optical silicon nitride structures Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume (down) 220 Issue Pages 03013  
  Keywords nanodiamonds, NV-centers, Si3N4  
  Abstract In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1190  
Permanent link to this record
 

 
Author Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. url  doi
openurl 
  Title Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid Type Journal Article
  Year 2020 Publication J. Luminescence Abbreviated Journal J. Luminescence  
  Volume (down) 220 Issue Pages 117008 (1 to 7)  
  Keywords Ag2S QD, quantum dots  
  Abstract The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2313 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1267  
Permanent link to this record
 

 
Author Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. url  doi
openurl 
  Title Towards the fiber-optic Kennedy quantum receiver Type Conference Article
  Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume (down) 220 Issue Pages 03011 (1 to 2)  
  Keywords SSPD, SNSPD, Kennedy quantum receiver  
  Abstract We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1288  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: