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Author (up) Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N.
Title Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz Type Conference Article
Year 2004 Publication Proc. 5-th MSMW Abbreviated Journal Proc. 5-th MSMW
Volume 2 Issue Pages 592-594
Keywords NbN HEB mixers
Abstract To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz.
Address Kharkov, Ukraine
Corporate Author Thesis
Publisher Place of Publication Kharkov, Ukraine Editor
Language Summary Language Original Title
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ISSN ISBN Medium
Area Expedition Conference The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
Notes Approved no
Call Number Serial 351
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Author (up) Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A.
Title Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? Type Conference Article
Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 187-189
Keywords NbN HEB mixers
Abstract We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
Address
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Publisher Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1439
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Author (up) Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B.
Title Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer Type Conference Article
Year 2006 Publication Proc. MRS Abbreviated Journal Proc. MRS
Volume 935 Issue Pages 210 (1 to 6)
Keywords NbN HEB mixers
Abstract Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.
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Publisher Place of Publication Editor
Language Summary Language Original Title
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ISSN 0272-9172 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1440
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Author (up) Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G.
Title An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 15 Issue 2 Pages 472-475
Keywords HEB mixer
Abstract
Address
Corporate Author Thesis
Publisher IEEE Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 371
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Author (up) Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G.
Title An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages 472-475
Keywords waveguide NbN HEB mixers
Abstract We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount.
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Notes Approved no
Call Number 1439677 Serial 1464
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