| Records |
| Author |
Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume |
2 |
Issue |
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Pages  |
688-689 |
| Keywords |
NbN HEB mixers |
| Abstract |
Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area |
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Russian |
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1445 |
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| Author |
Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. |
| Title |
Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz |
Type |
Conference Article |
| Year |
2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
| Volume |
2 |
Issue |
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Pages |
592-594 |
| Keywords |
NbN HEB mixers |
| Abstract |
To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz. |
| Address |
Kharkov, Ukraine |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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no |
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351 |
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| Author |
Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
| Title |
An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
15 |
Issue |
2 |
Pages |
472-475 |
| Keywords |
HEB mixer |
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IEEE |
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no |
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371 |
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Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
| Title |
An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance |
Type |
Journal Article |
| Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
15 |
Issue |
2 |
Pages |
472-475 |
| Keywords |
waveguide NbN HEB mixers |
| Abstract |
We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount. |
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no |
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1439677 |
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1464 |
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| Author |
Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess |
Type |
Conference Article |
| Year |
2004 |
Publication |
Proc. 29th IRMMW / 12th THz |
Abbreviated Journal |
Proc. 29th IRMMW / 12th THz |
| Volume |
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Issue |
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Pages |
329-330 |
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| Abstract |
We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area. |
| Address |
Karlsruhe, Germany |
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Karlsruhe, Germany |
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RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 |
Serial |
354 |
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