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| Author | Inderbitzin, K.; Engel, A.; Schilling, A.; Il'in, K.; Siegel, M. | ||||
Title  |
An ultra-fast superconducting Nb nanowire single-photon detector for soft x-rays | Type | Journal Article | ||
| Year | 2012 | Publication | Abbreviated Journal | Appl. Phys. Lett. | |
| Volume | 101 | Issue | Pages | ||
| Keywords | SSPD, SNSPD, x-ray, Nb | ||||
| Abstract | Although superconducting nanowire single-photon detectors (SNSPDs) are well studied regarding the detection of infrared/optical photons and keV-molecules, no studies on continuous x-ray photon counting by thick-film detectors have been reported so far. We fabricated a 100 nm thick niobium x-ray SNSPD (an X-SNSPD) and studied its detection capability of photons with keV-energies in continuous mode. The detector is capable to detect photons even at reduced bias currents of 0.4%, which is in sharp contrast to optical thin-film SNSPDs. No dark counts were recorded in extended measurement periods. Strikingly, the signal amplitude distribution depends significantly on the photon energy spectrum.VC |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ seleznev @ | Serial | 878 | ||
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| Author | Henrich, D.; Dorner,S.; Hofherr, M.; Il'in, K.; Semenov, A.; Heintze, E.; Scheffler, M.; Dressel, M.; Siegel, M. | ||||
| Title |
Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content | Type | Journal Article | ||
| Year | 2012 | Publication | Abbreviated Journal | J. Appl. Phys. | |
| Volume | 112 | Issue | Pages | ||
| Keywords | SSPD, SNSPD, magnetron sputtering, spectrum, NbN film, nitrogen concentration | ||||
| Abstract | The spectral detection efficiency and the dark count rate of superconducting nanowire single-photon detectors (SNSPD) have been studied systematically on detectors made from thin NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm thick NbN films results in a decrease of the dark count rates more than two orders of magnitude and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed phenomena are explained by an improvement of uniformity of NbN films that has been confirmed by a decrease of resistivity and an increase of the ratio of the measured critical current to the depairing current. The latter factor is considered as the most crucial for both the cut-off wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria for material properties to optimize SNSPD in the infrared spectral region. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757625] |
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| Corporate Author | D. Henrich, S. Dorner, M. Hofherr, K. Il'in, A. Semenov, E. Heintze, M. Scheffler, M. Dressel, M. Siegel | Thesis | |||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content | |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ seleznev @ | Serial | 877 | ||
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| Author | Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman | ||||
| Title |
Characterization of the electron energy relaxation process in NbN hot-electron devices | Type | Conference Article | ||
| Year | 1999 | Publication | Proc. 10th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 390-397 | ||
| Keywords | HEB mixers, SSPD, SNSPD, NbN films, Nb films | ||||
| Abstract | We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1576 | |||
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| Author | Il'in, K. S.; Cherednichenko, S. I.; Gol'tsman, G. N.; Currie, M.; Sobolewski, R. | ||||
| Title |
Comparative study of the bandwidth of phonon-cooled NbN hot-electron bolometers in submillimeter and optical wavelength ranges | Type | Conference Article | ||
| Year | 1998 | Publication | Proc. 9th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 9th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 323-330 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract | We report the results of the bandwidth measurements of NbN hot-electron bolometers, perfomied in the terahertz frequency domain at 140 GHz and 660 GHz and in time domain in the optical range at the wavelength of 395 nm.. Our studies were done on 3.5-nm-thick NbN films evaporated on sapphire substrates and patterned into ilin-size microbridges. In order to measure the gain bandwidth, we used two identical BWOs (140 or 660 GHz), one functioning as a local oscillator and the other as a signal source. The bandwidth we achieved was 3.5-4 GHz at 4.2 K with the optimal LO and DC biases. Time-domain measurements with a resolution below 300 fs were performed using an electro-optic sampling system, in the temperature range between 4.2 K to 9 K at various values of the bias current and optical power. The obtained response time of the NbN hot-electron bolometer to —100- fs-wide Ti:sapphire laser pulses was about 27 ps, what corresponds to the 5.9 GHz gain bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1590 | |||
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| Author | Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. | ||||
| Title |
Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer | Type | Journal Article | ||
| Year | 1996 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 68 | Issue | 16 | Pages | 2285-2287 |
| Keywords | HEB mixer, diffusion cooling channel, diffusion channel | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 262 | |||
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