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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state Type Journal Article
  Year 1988 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume 14 Issue 7 Pages 414-420  
  Keywords HEB  
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  Notes Duplicated as 1697 Approved no  
  Call Number Serial 236  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Elantiev, A. I.; Karasik, B. S.; Semenov, A. D. url  openurl
  Title Millimeter and submillimeter wave range mixer based on electronic heating of superconducting films in the resistive state Type Journal Article
  Year 1990 Publication Sov. Supercond. Abbreviated Journal Sov. Supercond.  
  Volume 3 Issue 10 Pages 1582-1597  
  Keywords HEB mixers  
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  Notes Approved no  
  Call Number Serial 240  
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Author Karasik, B. S.; Elantiev, A. I. url  openurl
  Title Analysis of the noise performance of a hot-electron superconducting bolometer mixer Type Conference Article
  Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 6th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 229-246  
  Keywords HEB mixers  
  Abstract A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.  
  Address  
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  Publisher Place of Publication Pasadena, Ca Editor  
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  Notes Approved no  
  Call Number Serial 258  
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Author Wyss, R. A.; Karasik, B. S.; McGrath, W. R.; Bamble, B.; LeDuc, H. openurl 
  Title Noise and bandwidth measurements of diffusion–cooled Nb hot–electron bolometer mixers at frequencies above the superconductive energy gap Type Conference Article
  Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages 215-229  
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  Corporate Author Thesis  
  Publisher Place of Publication Charlottesville, Virginia Editor  
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  Notes Approved no  
  Call Number RPLAB @ s @ qoheb_Tn_1250_at_1p1 Serial 293  
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Author Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. openurl 
  Title Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Type Journal Article
  Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume 79 Issue Pages 2049-2051  
  Keywords HEB detector, FIR, far infrared  
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  Notes Approved no  
  Call Number RPLAB @ s @ heb_eph_interaction_Gershenzon Serial 315  
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