| Records |
| Author |
Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
| Title |
Low noise NbTiN 1.25 THz SIS mixer for Herschel Space Observatory |
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Conference Article |
| Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
450 |
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Place of Publication |
Göteborg, Sweden |
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no |
| Call Number |
RPLAB @ s @ nt_SIS_760at1p25THz |
Serial |
359 |
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| Author |
Karpov, A.; Miller, D.; Rice, F.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
| Title |
Development of 1.25 THz SIS mixer for Herschel Space Observatory |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. SPIE |
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| Volume |
6275 |
Issue |
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Pages |
62751 |
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Editor |
Zmuidzinas, Jonas; Holland, Wayne S. |
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no |
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RPLAB @ s @ Karpov_SIS_2006 |
Serial |
401 |
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| Author |
Karpov, A.; Blondel, J.; Voss, M.; Gundlach, K. H. |
| Title |
A three photon noise SIS heterodyne receiver at submillimeter wavelength |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
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| Volume |
9 |
Issue |
2 |
Pages |
4456-4459 |
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RPLAB @ s @ sis_Karpov_1999 |
Serial |
300 |
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| Author |
Karpov, A.; Miller, D.; Rice, F.; Zmuidzinas, J.; Stern, J. A.; Bumble, B.; LeDuc, H. G. |
| Title |
Low noise 1.2 THz SIS receiver |
Type |
Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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| Volume |
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Issue |
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Pages |
21-22 |
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Place of Publication |
San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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no |
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RPLAB @ s @ sis_650K_at_1p13THz |
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316 |
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| Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
| Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
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| Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
| Keywords |
RSFQ, NbN, SIS |
| Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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