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Averkin, A. S.; Shishkin, A. G.; Chichkov, V. I.; Voronov, B. M.; Goltsman, G. N.; Karpov, A.; Ustinov, A. V. |
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Tunable frequency-selective surface based on superconducting split-ring resonators |
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2014 |
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8th Metamaterials |
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8th Metamaterials |
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superconducting split-ring resonators |
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We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator. |
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Copenhagen, Denmark |
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8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics – Metamaterials |
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1749 |
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Crockett, N. R.; Bergin, E. A.; Wang, S.; Lis, D. C.; Bell, T. A.; Blake, G. A.; Boogert, A.; Bumble, B.; Cabrit, S.; Caux, E.; Ceccarelli, C.; Cernicharo, J.; Comito, C.; Daniel, F.; Dubernet, M.-L.; Emprechtinger, M.; Encrenaz, P.; Falgarone, E.; Gerin, M.; Giesen, T. F.; Goicoechea, J. R.; Goldsmith, P. F.; Gupta, H.; Güsten, R.; Hartogh, P.; Helmich, F.; Herbst, E.; Honingh, N.; Joblin, C.; Johnstone, D.; Karpov, A.; Kawamura, J. H.; Kooi, J.; Krieg, J.-M.; Langer, W. D.; Latter, W. D.; Lord, S. D.; Maret, S.; Martin, P. G.; Melnick, G. J.; Menten, K. M.; Morris, P.; Müller, H. S. P.; Murphy, J. A.; Neufeld, D. A.; Ossenkopf, V.; Pearson, J. C.; Pérault, M.; Phillips, T. G.; Plume, R.; Qin, S.-L.; Roelfsema, P.; Schieder, R.; Schilke, P.; Schlemmer, S.; Stutzki, J.; van der Tak, F. F. S.; Tielens, A.; Trappe, N.; Vastel, C.; Yorke, H. W.; Yu, S.; Zmuidzinas, J. |
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Herschel observations of EXtra-Ordinary Sources (HEXOS): The Terahertz spectrum of Orion KL seen at high spectral resolution |
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2010 |
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Annual Rev. Astron. Astrophys. |
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521 |
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L21 (1 to 5) |
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HEB mixer applications, HIFI, Herschel |
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We present the first high spectral resolution observations of Orion KL in the frequency ranges 1573.4–1702.8 GHz (band 6b) and 1788.4–1906.8 GHz (band 7b) obtained using the HIFI instrument on board the Herschel Space Observatory. We characterize the main emission lines found in the spectrum, which primarily arise from a range of components associated with Orion KL including the hot core, but also see widespread emission from components associated with molecular outflows traced by H2O, SO2, and OH. We find that the density of observed emission lines is significantly diminished in these bands compared to lower frequency Herschel/HIFI bands. |
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1087 |
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Karpov, A.; Blondel, J.; Voss, M.; Gundlach, K. H. |
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A three photon noise SIS heterodyne receiver at submillimeter wavelength |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4456-4459 |
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RPLAB @ s @ sis_Karpov_1999 |
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300 |
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Karpov, A.; Miller, D.; Rice, F.; Zmuidzinas, J.; Stern, J. A.; Bumble, B.; LeDuc, H. G. |
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Low noise 1.2 THz SIS receiver |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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21-22 |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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RPLAB @ s @ sis_650K_at_1p13THz |
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316 |
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Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
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Low noise NbTiN 1.25 THz SIS mixer for Herschel Space Observatory |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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450 |
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Göteborg, Sweden |
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RPLAB @ s @ nt_SIS_760at1p25THz |
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359 |
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Karpov, A.; Miller, D.; Rice, F.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
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Development of 1.25 THz SIS mixer for Herschel Space Observatory |
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2006 |
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Proc. SPIE |
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6275 |
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62751 |
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Zmuidzinas, Jonas; Holland, Wayne S. |
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RPLAB @ s @ Karpov_SIS_2006 |
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401 |
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Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. |
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Broadband SIS mixer for 1 THz Band |
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Conference Article |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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35-35 |
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SIS mixer, noise temperature |
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We report the development of a low noise and broadband SIS mixer aimed for 1 THz channel of the Caltech Airborne Submillimeter Interstellar Medium Investigations Receiver (CASIMIR), designed for the Stratospheric Observatory for Far Infrared Astronomy, (SOFIA). The mixer uses an array of 0.24 µm² Nb/Al-AlN/NbTiN SIS junctions with critical current density of 30-50 KA/cm². The junctions are shaped in order to optimize the suppression of the Josephson DC currents. We are using a double slot planar antenna to couple the mixer chip with the telescope beam. The RF matching microcircuit is made using Nb and gold films. The mixer IF circuit is designed to cover 4 – 8 GHz band. A test receiver with the new mixer has a low noise operation in a 0.87 – 1.12 THz band. The minimum DSB receiver noise measured at 1 THz is 260 K (Y=1.64), apparently the lowest reported up to date. The receiver noise corrected for the loss in the LO injection beam splitter and in the cryostat window is 200 K. The combination of a broad operation band of about 250 GHz with a low receiver noise is making the new mixer a useful element for application at SOFIA. We will discuss the prospective of a further improvement of the sensitivity and extension of the upper frequency of operation of SIS mixer. |
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614 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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