|   | 
Details
   web
Records
Author Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S.
Title Submillimeter mixer based on YBa2Cu3O7-x thin film Type Conference Article
Year 2004 Publication Proc. 1-st conf. Fundamental problems of high temperature superconductivity Abbreviated Journal
Volume Issue Pages 291
Keywords HTS, HEB mixer
Abstract (up)
Address Moscow-Zvenigorod
Corporate Author Thesis
Publisher Place of Publication Moscow-Zvenigorod Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 355
Permanent link to this record
 

 
Author Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N.
Title NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling Type Conference Article
Year 2009 Publication Proc. 20th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 20th ISSTT
Volume Issue Pages 151-154
Keywords HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts
Abstract (up)
Address
Corporate Author Thesis
Publisher Place of Publication Charlottesville, USA Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 590
Permanent link to this record
 

 
Author Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Superconducting single photon detector integrated with optical cavity Type Conference Article
Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT
Volume Issue Pages 143-145
Keywords NbN SSPD, cavity
Abstract (up)
Address Suzdal / Vladimir (Russia)
Corporate Author Thesis
Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop
Notes September 23-28, 2011 Approved no
Call Number Serial 1385
Permanent link to this record
 

 
Author Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G.
Title Noise equivalent power and dynamic range of NBN hot-electron bolometers Type Conference Article
Year 2011 Publication Proc. MLPLIT Abbreviated Journal Proc. MLPLIT
Volume Issue Pages 146-148
Keywords NbN HEB
Abstract (up)
Address Suzdal / Vladimir (Russia)
Corporate Author Thesis
Publisher Modern laser physics and laser-information technologies for science and manufacture Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 1st international russian-chinese conference / youthschool-workshop
Notes September 23-28, 2011 Approved no
Call Number Serial 1386
Permanent link to this record
 

 
Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication IRMMW-THz Abbreviated Journal
Volume Issue Pages
Keywords Ag2S quantum dots
Abstract (up) A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-2035 ISBN 978-1-5386-8285-2 Medium
Area Expedition Conference
Notes Approved no
Call Number 8874267 Serial 1286
Permanent link to this record