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Author | Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. | ||||
Title | On chip carbon nanotube tunneling spectroscopy | Type | Journal Article | ||
Year | 2020 | Publication | Fullerenes, Nanotubes and Carbon Nanostructures | Abbreviated Journal | |
Volume | 28 | Issue | 1 | Pages | 50-53 |
Keywords | carbon nanotubes, CNT, scanning tunneling microscope, STM | ||||
Abstract | We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. | ||||
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Publisher | Taylor & Francis | Place of Publication | Editor | ||
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Notes | Approved | no | |||
Call Number | doi:10.1080/1536383X.2019.1671365 | Serial | 1269 | ||
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Author | Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. | ||||
Title | Bandwidth performance of a THz normal metal TiN bolometer-mixer | Type | Conference Article | ||
Year | 2019 | Publication | Proc. 30th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 30th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 102-103 | ||
Keywords | TiN normal metal bolometer, NMB | ||||
Abstract | We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1279 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-5 |
Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1324 | |||
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Author | Smirnov, K.; Korneev, A.; Minaeva, O.; Divochiy, A.; Tarkhov, M.; Ryabchun, S.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol'tsman, G.; Polonsky, S. | ||||
Title | Ultrathin NbN film superconducting single-photon detector array | Type | Conference Article | ||
Year | 2007 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 61 | Issue | Pages | 1081-1085 | |
Keywords | SSPD array | ||||
Abstract | We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes. | ||||
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ISSN | 1742-6588 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 408 | |||
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