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Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. |
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Title |
Hot electron bolometer mixer for 20 – 40 THz frequency range |
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Conference Article |
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Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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393-397 |
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IR NbN HEB mixers |
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The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. |
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Göteborg, Sweden |
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369 |
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Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. |
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Title |
Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors |
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Journal Article |
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Year |
2018 |
Publication |
Phys. Status Solidi B |
Abbreviated Journal |
Phys. Status Solidi B |
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255 |
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1 |
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1700227 (1 to 6) |
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carbon nanotube schottky diodes, CNT |
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Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. |
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0370-1972 |
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1321 |
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Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. |
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Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
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Journal Article |
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2016 |
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Semicond. |
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Semicond. |
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50 |
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12 |
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1600-1603 |
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carbon nanotubes, CNT detectors |
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Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. |
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1063-7826 |
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1776 |
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Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
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Conference Article |
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2019 |
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EPJ Web Conf. |
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EPJ Web Conf. |
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220 |
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03012 |
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e-beam lithography, Si3N4 |
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In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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2100-014X |
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1189 |
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Bell, M.; Kaurova, N.; Divochiy, A.; Gol'tsman, G.; Bird, J.; Sergeev, A.; Verevkin, A. |
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On the nature of resistive transition in disordered superconducting nanowires |
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Journal Article |
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2007 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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267-270 |
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SSPD, SNSPD |
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Hot-electron single-photon counters based on long superconducting nanowires are starting to become popular in optical and infrared technologies due to their ultimately high sensitivity and very high response speed. We investigate intrinsic fluctuations in long NbN nanowires in the temperature range of 4.2 K-20 K, i.e. above and below the superconducting transition. These fluctuations are responsible for fluctuation resistivity and also determine the noise in practical devices. Measurements of the fluctuation resistivity were performed at low current densities and also in external magnetic fields up to 5 T. Above the BCS critical temperature T co the resistivity is well described by the Aslamazov-Larkin (AL) theory for two-dimensional samples. Below T co the measured resistivity is in excellent agreement with the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory developed for one-dimensional superconductors. Despite that our nanowires of 100 nm width are two-dimensional with respect to the coherence length, our analysis shows that at relatively low current densities the one-dimensional LAMH mechanism based on thermally induced phase slip centers dominates over the two-dimensional mechanism related to unbinding of vortex-antivortex pairs below the Berezinskii-Kosterlitz-Thouless transition. |
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1051-8223 |
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1247 |
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