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| Author | Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. | ||||
| Title | Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders | Type | Abstract | ||
| Year | 2007 | Publication | Proc. APS March Meeting | Abbreviated Journal | Proc. APS March Meeting |
| Volume | 52 | Issue | 1 | Pages  |
L9.00013 |
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| Abstract | We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1027 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages |
6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. | ||||
| Title | Superconducting nanowire photon number resolving detector at telecom wavelength | Type | Conference Article | ||
| Year | 2008 | Publication | CLEO/QELS | Abbreviated Journal | CLEO/QELS |
| Volume | Issue | Pages |
Qmj1 (1 to 2) | ||
| Keywords | PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers | ||||
| Abstract | We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. | ||||
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| Publisher | Optical Society of America | Place of Publication | Editor | ||
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| ISSN | ISBN | 978-1-55752-859-9 | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Marsili:08 | Serial | 1243 | ||
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| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages |
1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
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| Author | Goltsman, G. N.; Korneev, A. A.; Finkel, M. I.; Divochiy, A. V.; Florya, I. N.; Korneeva, Y. P.; Tarkhov, M. A.; Ryabchun, S. A.; Tretyakov, I. V.; Maslennikov, S. N.; Kaurova, N. S.; Chulkova, G. M.; Voronov, B. M. | ||||
| Title | Superconducting hot-electron bolometer as THz mixer, direct detector and IR single-photon counter | Type | Abstract | ||
| Year | 2010 | Publication | 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves | Abbreviated Journal | |
| Volume | Issue | Pages |
1-1 | ||
| Keywords | SSPD, SNSPD, HEB | ||||
| Abstract | We present a new generation of superconducting single-photon detectors (SSPDs) and hot-electron superconducting sensors with record characteristic for many terahertz and optical applications. | ||||
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| ISSN | 2162-2027 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ goltsman2010superconducting | Serial | 1028 | ||
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