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Author Shurakov, A.; Seliverstov, S.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.
Title Input bandwidth of hot electron bolometer with spiral antenna Type Journal Article
Year 2012 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.
Volume 2 Issue 4 Pages (down) 400-405
Keywords NbN HEB bolometers bandwidth, log-spiral antenna
Abstract We report the results of our study of the input bandwidth of hot electron bolometers (HEB) embedded into the planar log-spiral antenna. The sensitive element is made of the ultrathin superconducting NbN film patterned as a bridge at the feed of the antenna. The contacts between the antenna and a sensitive element are made from in situ deposited gold (i.e., deposited over NbN film without breaking vacuum), which gives high quality contacts and makes the response of the HEB at higher frequencies less affected by the RF loss. An accurate experimental spectroscopic procedure is demonstrated that leads to the confirmation of the wide ( 8 THz) bandwidth in this antenna coupled device.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2156-342X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1161
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Author Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N.
Title Hot electron bolometer mixer for 20 – 40 THz frequency range Type Conference Article
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 16th Int. Symp. Space Terahertz Technol.
Volume Issue Pages (down) 393-397
Keywords IR NbN HEB mixers
Abstract The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
Address
Corporate Author Thesis
Publisher Place of Publication Göteborg, Sweden Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 369
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages (down) 369-371
Keywords silicon detector, quantum dot, IR, surface states
Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-89513-451-1 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1154
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Author Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G.
Title Superconducting parallel nanowire detector with photon number resolving functionality Type Journal Article
Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.
Volume 56 Issue 2-3 Pages (down) 334-344
Keywords PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN
Abstract We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0340 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ gujma @ Serial 701
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Author Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N.
Title Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess Type Conference Article
Year 2004 Publication Proc. 29th IRMMW / 12th THz Abbreviated Journal Proc. 29th IRMMW / 12th THz
Volume Issue Pages (down) 329-330
Keywords
Abstract We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
Address Karlsruhe, Germany
Corporate Author Thesis
Publisher Place of Publication Karlsruhe, Germany Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004 Serial 354
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