| Records |
| Author |
Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. |
| Title |
Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz |
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Conference Article |
| Year |
2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
| Volume |
2 |
Issue |
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592-594 |
| Keywords |
NbN HEB mixers |
| Abstract |
To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz. |
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Kharkov, Ukraine |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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351 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
| Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
Type |
Journal Article |
| Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
| Volume |
48 |
Issue |
6 |
Pages |
671-675 |
| Keywords |
NbN HEB mixers |
| Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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Smirnov, K.; Korneev, A.; Minaeva, O.; Divochij, A.; Rubtsova, I.; Antipov, A.; Ryabchun, S.; Okunev, O.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Kaurova, N.; Seleznev, V.; Korotetskaya, Y.; Gol’tsman, G. |
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Superconducting single-photon detector for near- and middle IR wavelength range |
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Conference Article |
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2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
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2 |
Issue |
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Pages |
684-685 |
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NbN SSPD, SNSPD |
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Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to 20% at 1.55 mum and 0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems |
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Russian |
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1447 |
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Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
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Superconducting hot electron bolometer mixer for middle IR range |
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Conference Article |
| Year |
2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume |
2 |
Issue |
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Pages |
686-687 |
| Keywords |
IR NbN HEB mixer, detector, GaAs substrate |
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The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. |
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4023440 |
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1297 |
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Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
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Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
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Conference Article |
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2006 |
Publication |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
Abbreviated Journal |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume |
2 |
Issue |
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Pages |
688-689 |
| Keywords |
NbN HEB mixers |
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Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area |
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Russian |
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1445 |
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