| Home | [1–10] << 11 12 13 14 15 16 17 18 19 >> |
|
| Records | |||||
|---|---|---|---|---|---|
| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords | detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial  |
1151 | |||
| Permanent link to this record | |||||
| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Status Solidi RRL | Abbreviated Journal | Phys. Status Solidi RRL |
| Volume | 13 | Issue | 9 | Pages | 1900187-(1-6) |
| Keywords | |||||
| Abstract | For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1862-6254 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial |
1149 | |||
| Permanent link to this record | |||||
| Author | Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G. | ||||
| Title | On-chip coherent detection with quantum limited sensitivity | Type | Journal Article | ||
| Year | 2017 | Publication | Sci Rep | Abbreviated Journal | Sci Rep |
| Volume | 7 | Issue | 1 | Pages | 4812 |
| Keywords | waveguide, SSPD, SNSPD | ||||
| Abstract | While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously. | ||||
| Address | National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2045-2322 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28684752; PMCID:PMC5500578 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial |
1129 | ||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial |
1111 | ||
| Permanent link to this record | |||||
| Author | Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. | ||||
| Title | Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers | Type | Journal Article | ||
| Year | 2016 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 109 | Issue | 13 | Pages | 132602 |
| Keywords | HEB mixer, contacts | ||||
| Abstract | We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial |
1107 | |||
| Permanent link to this record | |||||