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Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
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Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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177-179 |
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directly coupled NbN HEB mixers |
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We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz. |
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Paris, France |
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386 |
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Tarkhov, M.; Morozov, D.; Mauskopf, P.; Seleznev, V.; Korneev, A.; Kaurova, N.; Rubtsova, I.; Minaeva, O.; Voronov, B.; Goltsman, G. |
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Single photon counting detector for THz radioastronomy |
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Conference Article |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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119-122 |
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NbN SSPD, SNSPD |
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In this paper we present the results of the research on the superconducting NbN-ultrathin-film single- photon detectors (SSPD) which are capable to detect single quanta in middle IR range. The detection mechanism is based on the hotspot formation in quasi-two-dimensional superconducting structures upon photon absorption. Spectral measurements showed that up to 5.7 gm wavelength (52 THz) the SSPD exhibits single-photon sensitivity. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of -4% at 60 THz. Although further decrease of the operation temperature far below 1 K does not lead to any significant increase of quantum efficiency. We expect that the improvement of the SSPD's performance at reduced operation temperature will make SSPD a practical detector with high characteristics for much lower THz frequencies as well. |
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1438 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Silicon room temperature IR detectors coated with Ag2S quantum dots |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
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Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
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2018 |
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Radiophys. Quant. Electron. |
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Radiophys. Quant. Electron. |
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60 |
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12 |
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988-992 |
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NbN HEB mixer |
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We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth. |
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0033-8443 |
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1307 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Room temperature silicon detector for IR range coated with Ag2S quantum dots |
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2019 |
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Phys. Status Solidi RRL |
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Phys. Status Solidi RRL |
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13 |
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9 |
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1900187-(1-6) |
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For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. |
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1862-6254 |
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