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Author Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. url  doi
openurl 
  Title Fabrication of nanostructured superconducting single-photon detectors Type (down) Journal Article
  Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 13 Issue 2 Pages 192-195  
  Keywords NbN SSPD, SNSPD  
  Abstract Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1558-2515 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1515  
Permanent link to this record
 

 
Author Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. url  openurl
  Title The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer Type (down) Journal Article
  Year 2003 Publication J. of communications technol. & electronics Abbreviated Journal J. of communications technol. & electronics  
  Volume 48 Issue 6 Pages 671-675  
  Keywords NbN HEB mixers  
  Abstract Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.  
  Address  
  Corporate Author Thesis  
  Publisher MAIK Nauka/Interperiodica, Birmingham, AL Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1064-2269 ISBN Medium  
  Area Expedition Conference  
  Notes https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) Approved no  
  Call Number Vakhtomin2003 Serial 1522  
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Author Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. url  doi
openurl 
  Title Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection Type (down) Journal Article
  Year 2016 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 50 Issue 12 Pages 1600-1603  
  Keywords carbon nanotubes, CNT detectors  
  Abstract Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1776  
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. url  doi
openurl 
  Title Helicity-sensitive plasmonic terahertz interferometer Type (down) Journal Article
  Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume 20 Issue 10 Pages 7296-7303  
  Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation  
  Abstract Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.  
  Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1530-6984 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:32903004 Approved no  
  Call Number Serial 1781  
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Author Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. url  openurl
  Title Fabrication and characterisation of NbN HEB mixers with in situ gold contacts Type (down) Conference Article
  Year 2008 Publication Proc. 19th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 19th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 62-67  
  Keywords HEB, mixer, NbN, in-situ contacts  
  Abstract We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Groningen, Netherlands Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 412  
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